Molecular beam epitaxy grown template for subsequent atomic layer deposition of high {kappa} dielectrics
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
Molecular beam epitaxy (MBE) grown high {kappa} dielectrics of Al{sub 2}O{sub 3} and HfO{sub 2} are employed as templates to suppress effectively the oxide/Si interfacial layer formation during the subsequent atomic layer deposition (ALD) growth. The absence of the interfacial layer was confirmed using x-ray photoelectron spectroscopy and high resolution transmission electron microscopy. Two composite films consisting of ALD Al{sub 2}O{sub 3}(1.9 nm)/MBE Al{sub 2}O{sub 3}(1.4 nm) and ALD Al{sub 2}O{sub 3}(3.0 nm)/MBE HfO{sub 2}(2.0 nm) showed overall {kappa} values of 9.1 and 11.5, equivalent oxide thicknesses of 1.41 and 1.7 nm, D{sub it} of 2.2x10{sup 11} and 2x10{sup 11} cm{sup -2} eV{sup -1}, and leakage current densities of 2.4x10{sup -2} A/cm{sup 2} at V{sub fb}-1 V and 1.1x10{sup -4} A/cm{sup 2} at V{sub fb}+1 V, respectively. The attainment of high dielectric constant suggests that there is no low {kappa} capacitor in series near the oxide/Si interface.
- OSTI ID:
- 20880110
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 22; Other Information: DOI: 10.1063/1.2397542; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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