Growth dynamics of pentacene thin films: Real-time synchrotron x-ray scattering study
- Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
- Department of Physics, University of Vermont, Burlington, Vermont 05405 (United States)
- Cornell High Energy Synchrotron Source, Ithaca, New York 14853 (United States)
Real-time synchrotron x-ray scattering in the anti-Bragg configuration was used to monitor the dynamics of pentacene film growth on inert substrates. A distributed-growth model, according to which pentacene molecules adsorbed on the nth layer can either nucleate and contribute to the growth of the (n+1)th layer or transfer downward and contribute to the growth of the nth layer, gave a good description of the data. For molecules adsorbed on the first and second layers, the probability of downward transfer was found to be dependent on the substrate, and independent of temperature within the range from 25 to 60 deg. C. For films grown on SiO{sub 2}, an Ehrlich-Schwoebel barrier of the order of 70 meV dominated downward transfer of pentacene molecules in layers away from the substrate. For films grown on an alkylated self-assembled monolayer, significant desorption of pentacene molecules from the substrate at elevated temperatures forced the growth mode toward the three-dimensional limit.
- OSTI ID:
- 20788191
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 73, Issue 20; Other Information: DOI: 10.1103/PhysRevB.73.205307; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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