Hole transport through proton-irradiated p-type silicon wafers during electrochemical anodization
- Physics Department, National University of Singapore, Lower Kent Ridge Road, 119260 Singapore (Singapore)
- Materials Science and Engineering Department, National University of Singapore, Lower Kent Ridge Road, 119260 Singapore (Singapore)
The hole current density flowing through and around proton-irradiated areas of p-type silicon during electrochemical anodization is simulated and studied experimentally using scanning electron microscopy and photoluminescence imaging. It is shown that for certain irradiation geometries the current flow may be either reduced or enhanced in areas adjacent to irradiated lines, resulting in enhanced or reduced rates of porous silicon formation and corresponding changes in photoluminescence intensity and feature height. The current flow to the surface is unaffected by both the beam straggle and the high defect density at the end of ion range, enabling feature dimensions of {approx}200 nm to be attained. This study has enabled fabrication of micromachined and patterned porous silicon structures in anodized wafers with accurate control of feature dimensions, layer thickness, and photoluminescence emission wavelength and intensity.
- OSTI ID:
- 20787849
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 73, Issue 3; Other Information: DOI: 10.1103/PhysRevB.73.035428; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ANODIZATION
CURRENT DENSITY
ELECTRIC CURRENTS
GEOMETRY
HOLE MOBILITY
HOLES
IRRADIATION
LAYERS
P-TYPE CONDUCTORS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
POROUS MATERIALS
PROTONS
SCANNING ELECTRON MICROSCOPY
SILICON
SURFACES