Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer

Journal Article · Mon Jun 19 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2216924· OSTI ID:20779424

Shen, C -H; Chen, H -Y; Lin, H -W; Gwo, S; Klochikhin, A A; Davydov, V Yu ^[1]

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1. Department of Physics, National Tsing-Hua University, Hsinchu 300, Taiwan (China)

We demonstrate that vertically aligned InN nanorods can be grown on Si(111) by plasma-assisted molecular-beam epitaxy. Detailed structural characterization indicates that individual nanorods are wurtzite InN single crystals with the growth direction along the c axis. Near-infrared photoluminescence (PL) from InN nanorods can be clearly observed at room temperature. However, in comparison to the InN epitaxial films, the PL efficiency is significantly lower. Moreover, the variable-temperature PL measurements of InN nanorods exhibit anomalous temperature effects. We propose that these unusual PL properties are results of considerable structural disorder (especially for the low-temperature grown InN nanorods) and strong surface electron accumulation effects.

• OSTI ID: 20779424
• Journal Information: Applied Physics Letters, Vol. 88, Issue 25; Other Information: DOI: 10.1063/1.2216924; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELECTRONS
FILMS
INDIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
NANOSTRUCTURES
PHOTOLUMINESCENCE
PLASMA
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K