Graphoepitaxy of sexithiophene on thermally oxidized silicon surface with artificial periodic grooves

Journal Article · Mon Jun 19 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2216375· OSTI ID:20779419

Ikeda, Susumu; Saiki, Koichiro; Tsutsui, Ken; Edura, Tomohiko; Wada, Yasuo; Miyazoe, Hiroyuki; Terashima, Kazuo; Inaba, Katsuhiko; Mitsunaga, Toru; Shimada, Toshihiro ^[1]

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1. Department of Complexity Science and Engineering, Graduate School of Frontier Sciences, University of Tokyo, Kashiwanoha 5-1-5, Kashiwa, Chiba 277-8561 (Japan)

Graphoepitaxial growth of a sexithiophene (6T) thin film was achieved on a thermally oxidized silicon surface with artificial periodic grooves. The surface structure was fabricated by electron beam lithography and the thin film was grown by molecular beam deposition. A well-pronounced, in-plane oriented component ([010]{sub 6T} parallel grooves) was identified by grazing incidence x-ray diffraction, though there also existed some randomly oriented 6T grains. Presence of the graphoepitaxial component was also confirmed by results of the orientational analysis of atomic force microscopy images. It was shown that the in-plane orientation control of organic semiconductors is possible using graphoepitaxy.

• OSTI ID: 20779419
• Journal Information: Applied Physics Letters, Vol. 88, Issue 25; Other Information: DOI: 10.1063/1.2216375; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
DEPOSITION
ELECTRON BEAMS
IMAGES
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
ORGANIC SEMICONDUCTORS
PERIODICITY
SILICON
THIN FILMS
X-RAY DIFFRACTION