Direct epitaxial growth of semiconducting {beta}-FeSi{sub 2} thin films on Si(111) by facing targets direct-current sputtering
- Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580 (Japan)
Semiconducting {beta}-FeSi{sub 2} thin films were epitaxially as-grown on Si(111) substrates at a substrate temperature of 600 deg. C, which is at least 200 deg. C lower than ordinary annealing temperatures, by using the facing targets direct-current sputtering (FTDCS) method using an FeSi{sub 2} target without annealing. The deposited film exhibits a smooth surface with a surface roughness root mean square of 1.47 nm. The direct and indirect optical band gaps estimated from the experiment were in agreement with those of the single crystalline bulk. Temperature dependence of the electrical conductivity implied Co incorporation from the FeSi{sub 2} targets with a purity of 3N. The FTDCS method, in which a substrate is free of plasma and energetic neutral atoms diffused into the substrate owing to low Ar pressure sputtering, is effective for the direct epitaxial growth of {beta}-FeSi{sub 2} thin films with smooth surfaces.
- OSTI ID:
- 20779228
- Journal Information:
- Applied Physics Letters, Vol. 88, Issue 18; Other Information: DOI: 10.1063/1.2200153; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical and electrical characterization of sputter-deposited FeSi{sub 2} and its evolution with annealing temperature
Structural and optical properties of {beta}-FeSi{sub 2} film prepared by laser ablation method and comparison of {beta}-FeSi{sub 2} films prepared by three different methods