Reactive ion beam etching of HfO{sub 2} film and removal of sidewall redeposition
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026 (China) and School of Mechanical and Automobile Engineering, Hefei University of Technology, Hefei 230009 (China)
Comparative studies on ion beam etching (IBE) and reactive ion beam etching (RIBE) of HfO{sub 2} film have been carried out using photoresist as the masking layer. The etching rates of HfO{sub 2} film and photoresist mask in pure Ar and Ar/CHF{sub 3} mixture plasmas were measured as a function of ion energy, plasma composition, and ion beam incident angle. It has been found that the RIBE with Ar/CHF{sub 3} plasma is capable of lowering the threshold energy of ion beam and increasing sputtering yield, compared to the IBE with pure Ar. The redeposition of photoresist sidewall is a major issue, due to the formation of nonvolatile etching products during sputtering of HfO{sub 2} film in both IBE and RIBE. However, the sidewall redeposition can be easily removed in HCl solutions with assistance of ultrasonic wave for RIBE with Ar/CHF{sub 3} plasma. Alternatively, the sidewall redeposition can be eliminated by controlling the slope of photoresist sidewall or combined with ion incident angle.
- OSTI ID:
- 20777305
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 24, Issue 4; Other Information: DOI: 10.1116/1.2209657; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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