Morphology of IR and UV Laser-induced Structural Changes on Silicon Surfaces
- Laboratorio de Optica Cuantica. Departamento de Fisica. Universidad Autonoma Metropolitana-Iztapalapa. Av. San Rafael Atlixco No 186 Col Vicentina, Mexico D.F. 04390 (Mexico)
Using scanning electronic microscopy, we analyze the structural changes induced in silicon (100) wafers by focused IR (1064 nm) and UV (355 nm) nanosecond laser pulses. The experiments were performed in the laser ablation regime. When a silicon surface is irradiated by laser pulses in an O2 atmosphere conical microstructures are obtained. The changes in silicon surface morphology depend both on the incident radiation wavelength and the environmental atmosphere. We have patterned Si surfaces with a single focused laser spot and, in doing the experiments with IR or UV this reveals significant differences in the initial surface cracking and pattern formation, however the final result consist of an array of microcones when the experiment is carried out in oxygen. We employ a random scanning technique to irradiate silicon surfaces over large areas. In this form we have obtained large patterned areas.
- OSTI ID:
- 20722122
- Journal Information:
- AIP Conference Proceedings, Vol. 759, Issue 1; Conference: 2. Mexican meeting on mathematical and experimental physics, Mexico City (Mexico), 6-10 Sep 2004; Other Information: DOI: 10.1063/1.1928156; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ultraviolet versus infrared: Effects of ablation laser wavelength on the expansion of laser-induced plasma into one-atmosphere argon gas
Wavelength-dependent magnetic transitions of self-organized iron–aluminum stripes induced by pulsed laser irradiation