SiO{sub x}F{sub y} passivation layer in silicon cryoetching
- GREMI-Polytech'Orleans, 14 rue d'Issoudun, BP 6744, 45067 Orleans Cedex 2 (France)
The SiO{sub x}F{sub y} passivation layer created on structure sidewalls during silicon cryoetching is investigated. This SiO{sub x}F{sub y} passivation layer formation strongly depends on O{sub 2} content, temperature and bias. It is a fragile layer, which mostly disappears when the wafer is warmed up to ambient temperature. A mass spectrometer was used to analyze the desorbed species during the warm-up and using this instrument allowed us to find a large signal increase in SiF{sub 3}{sup +} between -80 deg. C and -50 deg. C. SiF{sub 4} etching products can participate in the formation of the passivation layer as it is shown by a series of test experiments. SiF{sub 4}/O{sub 2} plasmas are used to form a thin SiO{sub x}F{sub y} layer on a cooled silicon wafer. Thickness and optical index of this thin film can be determined by in situ spectroscopic ellipsometry. It is shown that the passivation layer spontaneously desorbs when the silicon wafer temperature increases in good agreement with the mass spectrometry analysis. Two physical mechanisms are proposed to explain the SiO{sub x}F{sub y} passivation layer buildup involving either the etching products or the SiF{sub x} sites created during etching. In both cases, oxygen radicals react at the surface to form the SiO{sub x}F{sub y} layer.
- OSTI ID:
- 20719810
- Journal Information:
- Journal of Applied Physics, Vol. 98, Issue 10; Other Information: DOI: 10.1063/1.2133896; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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