Anodization of electrolytically polished Ta surfaces for enhancement of carrier injection into organic field-effect transistors
- Department of Chemistry, Saitama University, 255 Shimo-Okubo, Sakura-Ku, Saitama 338-8570 (Japan)
Electrolytically polished surfaces of Ta sheets were anodized in an aqueous KI solution to form Ta{sub 2}O{sub 5} films with a relatively high dielectric constant and a high breakdown electric field. Organic field-effect transistors (OFETs) were fabricated on these Ta{sub 2}O{sub 5}/Ta substrates with a bottom gate configuration. The Ta{sub 2}O{sub 5} films anodized at 100 V were about 200 nm thick, and the dielectric strength was as high as 5 MV/cm. A p-type pentacene OFET fabricated on this bottom gate showed the good field-effect mobility of 0.35 cm{sup 2}/V s. By using this high-k gate substrate, it becomes possible to inject a higher amount of charge carriers into organic active layers than on the SiO{sub 2}/Si gate conventionally used in most OFETs.
- OSTI ID:
- 20714163
- Journal Information:
- Journal of Applied Physics, Vol. 98, Issue 11; Other Information: DOI: 10.1063/1.2138807; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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