Influence of germanium on the formation of NiSi{sub 1-x}Ge{sub x} on (111)-oriented Si{sub 1-x}Ge{sub x}
- Angstroem Laboratory, Department of Materials Science, Uppsala University, P.O. Box 534, SE-75121 Uppsala (Sweden)
The formation of NiSi{sub 1-x}Ge{sub x} on Si{sub 1-x}Ge{sub x}(111) substrates with x=0, 0.05, and 0.20 at an annealing temperature of 500 deg. C has been studied by x-ray diffraction, transmission electron microscopy, and pole-figure measurements. NiSi formed preferentially oriented on Si, with (100) (001), and (102) parallel to Si(111) and NiSi[010] parallel Si<211>. In NiSi{sub 0.95}Ge{sub 0.05} (001) and (102) maintained their preferential orientations, whereas NiSi{sub 0.95}Ge{sub 0.05}(100) was rotated by 30 deg. , so that NiSi{sub 0.95}Ge{sub 0.05}[010] parallel Si{sub 0.95}Ge{sub 0.05}<011>. An epitaxial alignment in the form of a double axiotaxy, with NiSi{sub 0.95}Ge{sub 0.05}(2{+-}11) as well as (20-2) parallel Si{sub 0.95}Ge{sub 0.05}{l_brace}220{r_brace}, simultaneously with NiSi{sub 0.95}Ge{sub 0.05}(0{+-}13) as well as (020) parallel Si{sub 0.95}Ge{sub 0.05}{l_brace}022{r_brace}, caused NiSi{sub 0.95}Ge{sub 0.05}(100) to tilt over the range of 0 deg. -7.5 deg. . The Ge addition also enhanced the preferentially oriented structure by reinforcing NiSi{sub 0.95}Ge{sub 0.05}(123) parallel Si{sub 0.95}Ge{sub 0.05}(111) through the axiotaxial alignments, NiSi{sub 0.95}Ge{sub 0.05}(211) and (-112) parallel Si{sub 0.95}Ge{sub 0.05}{l_brace}220{r_brace}. Observed was also the presence of NiSi{sub 0.95}Ge{sub 0.05}(011) parallel Si{sub 0.95}Ge{sub 0.05}(111), with NiSi{sub 0.95}Ge{sub 0.05}[100] parallel Si{sub 0.95}Ge{sub 0.05}<011>. In the case of NiSi{sub 0.80}Ge{sub 0.20}, the preferential orientations were sharply reduced in favor of NiSi{sub 0.80}Ge{sub 0.20}(100) parallel Si{sub 0.80}Ge{sub 0.20}(111), with NiSi{sub 0.80}Ge{sub 0.20}[010] parallel Si{sub 0.80}Ge{sub 0.20}<011> and the 30 deg. rotation thus preserved. The observed Ge influence is shown to be consistent with a model suggested earlier for Si{sub 1-x}Ge{sub x}(001) substrates, which is based on the nonexistence of Ni(Si{sub 1-x}Ge{sub x}){sub 2} for all except the smallest values of x. High-resolution transmission electron microscopy was used to show that the surface steps typical of molecular-beam-deposited epitaxial Si{sub 1-x}Ge{sub x} substrate films do not influence the growth of the NiSi{sub 1-x}Ge{sub x}.
- OSTI ID:
- 20714082
- Journal Information:
- Journal of Applied Physics, Vol. 98, Issue 5; Other Information: DOI: 10.1063/1.2034081; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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