The influence of Cu/Al ratio on properties of chemical-vapor-deposition-grown p-type Cu-Al-O transparent semiconducting films

Journal Article · Mon Aug 01 00:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1997293· OSTI ID:20714024

Jianling, Cai; Hao, Gong ^[1]

---

1. Department of Materials Science and Engineering, National University of Singapore, 5 Lower Kent Ridge Road, Singapore 119074 (Singapore)

Transparent p-type copper aluminum oxide (Cu-Al-O) semiconducting thin films, with Cu/Al atomic ratios ranging from 1.0 to 4.3, were deposited by plasma-enhanced metal-organic chemical-vapor deposition. The films were grown on z-cut single-crystal quartz substrates, at a substrate temperature of 450 deg. C. Crystalline CuAlO{sub 2} was found dominant in the films, including small amounts of CuAl{sub 2}O{sub 4}, Al{sub 2}O{sub 3}, and amorphous Cu{sub 2}O. The effect of varying Cu/Al ratio on the structural, electrical, and optical properties of the films were studied by x-ray diffraction, energy dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible spectroscopy, and Seebeck technique, and discussed. We were able to optimize the Cu/Al ratio for the p-type conductivity and transmittance in copper aluminum oxide thin films, and the best conductive film, with a room-temperature conductivity of 0.289 S cm{sup -1} and a transparency of 80%, was found to have a Cu/Al ratio of 1.4{+-}0.3. In addition, the mechanism of the p-type conduction of copper aluminum oxide was discussed.

• OSTI ID: 20714024
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 3; Other Information: DOI: 10.1063/1.1997293; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CHEMICAL ANALYSIS
CHEMICAL VAPOR DEPOSITION
COPPER OXIDES
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
MONOCRYSTALS
OPACITY
QUARTZ
SEEBECK EFFECT
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
ULTRAVIOLET RADIATION
ULTRAVIOLET SPECTRA
VISIBLE SPECTRA
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
X-RAY SPECTROSCOPY