Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers

Journal Article · Mon Aug 15 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2011771· OSTI ID:20702603

Mai, Y; Klein, S; Carius, R; Stiebig, H; Geng, X; Finger, F ^[1]

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1. IPV, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany)

Significant improvement in open circuit voltage and fill factor was achieved for microcrystalline silicon ({mu}c-Si:H) solar cells deposited by plasma-enhanced chemical vapor deposition (PECVD) by the incorporation of an intrinsic {mu}c-Si:H p/i buffer layer fabricated by hot-wire (HW) CVD. The improved p/i interface quality, likely due to the ion-free deposition on the p layers in the HWCVD process, was concluded from a considerably enhanced blue light response in such solar cells. Using this buffer layer concept allows the authors to apply high deposition rate PECVD processes for the {mu}c-Si:H i layer material, yielding a high efficiency of 10.3% for a single junction {mu}c-Si:H solar cell.

• OSTI ID: 20702603
• Journal Information: Applied Physics Letters, Vol. 87, Issue 7; Other Information: DOI: 10.1063/1.2011771; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BUFFERS
CHEMICAL VAPOR DEPOSITION
ELECTRIC POTENTIAL
FILL FACTORS
INTERFACES
LAYERS
PLASMA
SEMICONDUCTOR MATERIALS
SILICON
SILICON SOLAR CELLS
VISIBLE RADIATION
WIRES