Characteristics of HfO{sub 2} thin films grown by plasma atomic layer deposition
- Division of Materials Science and Engineering, Hanyang University, 133-791 (Korea, Republic of)
The characteristics of HfO{sub 2} films grown on Si substrates using a tetrakis-diethyl-amino-hafnium precursor by the remote plasma atomic layer deposition (RPALD) and direct plasma ALD (DPALD) methods were investigated by physical and electrical measurement techniques. The as-deposited HfO{sub 2} layer from RPALD exhibits an amorphous structure, while the HfO{sub 2} layer from DPALD exhibits a clearly visible polycrystalline structure. Medium energy ion scattering measurement results indicate that the interfacial layer consists of the interfacial SiO{sub 2-x} and silicate layers. These results suggested that the stoichiometric change in the depth direction could be related to the energetic reactant in a state of plasma used in the plasma ALD process, resulting in damage to the Si surface and interactions between Hf and SiO{sub 2-x}. The as-deposited HfO{sub 2} films using RPALD have the better interfacial layer characteristics than those using DPALD. A metal-oxide-semiconductor capacitor fabricated using the RPALD method exhibits electrical characteristics such as equivalent oxide thickness (EOT) of 1.8 nm with an effective fixed oxide charge density (Q{sub f,eff}) of {approx}4.2x10{sup 11} q/cm{sup 2} and that for DPALD has a EOT (2.0 nm), and Q{sub f,eff}({approx}-1.2x10{sup 13} q/cm{sup 2})
- OSTI ID:
- 20702528
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 5; Other Information: DOI: 10.1063/1.2005370; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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