skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Epitaxially grown La-modified BiFeO{sub 3} magnetoferroelectric thin films

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.1941474· OSTI ID:20702419
; ; ; ;  [1]
  1. Department of Materials Science and Engineering, and Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)

Effects of the La modification on the structure and magnetoferroelectric properties of BiFeO{sub 3} (BFO)-based films were examined. On SrTiO{sub 3} (001) planes, all the BFO-based films (for x between 0 and 0.15 in Bi{sub 1-x}La{sub x}FeO{sub 3} with the film thickness of 300 nm) were grown epitaxially along [001] direction of tetragonal symmetry. However, the La modification gradually changes the film structure from a monoclinically tilted state to a nontilted tetragonal-like state. Both extended x-ray absorption fine structure and x-ray absorption near edge structure spectra revealed the presence of a strong in-plane compressive stress. Room-temperature magnetization-field curves indicated that the saturation magnetization of these BFO-based epitaxial films increased with the degree of La modification. La-modified BFO film capacitors fabricated on SrRuO{sub 3}-buffered SrTiO{sub 3} (001) substrates showed fatigue-free ferroelectric switching characteristics up to 4x10{sup 10} read/write cycles at a frequency of 1 MHz.

OSTI ID:
20702419
Journal Information:
Applied Physics Letters, Vol. 86, Issue 22; Other Information: DOI: 10.1063/1.1941474; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English