High-energy ion-beam-induced phase separation in SiO{sub x} films
- Surfaces, Interfaces and Devices, Debye Institute, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht (Netherlands)
The modification of the nanostructure of silicon suboxide (SiO{sub x}) films as a result of high-energy heavy-ion irradiation has been studied for the entire range 0.1{<=}x<2. The SiO{sub x} films have been obtained by radio-frequency magnetron sputter deposition. For 50 MeV {sup 63}Cu{sup 8+} ions and an angle of incidence of 20 deg. with the plane of the surface, and for x{>=}0.5, it takes a fluence of about 10{sup 14}/cm{sup 2} to reach a Si-O-Si infrared absorption spectrum, which is supposed to be characteristic for a Si-SiO{sub 2} composite film structure. For smaller x values, it takes a much larger fluence. The interpretation of the IR spectra is corroborated for the surface region by results from x-ray photoelectron spectroscopy. The results present evidence for a mechanism, in which the phase separation takes place in the thermal spike, initiated by the energy deposited in many overlapping independent ion tracks. Such a process is possible since the suboxides fulfill the conditions for spinodal decomposition.
- OSTI ID:
- 20666271
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 71, Issue 12; Other Information: DOI: 10.1103/PhysRevB.71.125329; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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