Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende

Journal Article · Fri Oct 01 00:00:00 EDT 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1787142· OSTI ID:20662077

Monroy, E; Hermann, M; Sarigiannidou, E; Andreev, T; Holliger, P; Monnoye, S; Mank, H; Daudin, B; Eickhoff, M ^[1]

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1. Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

We have investigated the polytype conversion of a GaN film from N-face wurtzite (2H-) to zinc-blende (3C-) structure due to Mg doping during growth by plasma-assisted molecular-beam epitaxy. Structural analysis by high-resolution transmission electron microscopy and high-resolution x-ray diffraction measurement revealed alignment of the cubic phase with the [111] axis perpendicular to the substrate surface. The optical characteristics of GaN:Mg layers are shown to be very sensitive to the presence of the cubic polytype. For low Mg doping, photoluminescence is dominated by a phonon-replicated donor-acceptor pair at {approx}3.25 eV, related to the shallow Mg acceptor level, accompanied by a narrow excitonic emission. For high Mg doping, the photoluminescence spectra are also dominated by a line around 3.25 eV, but this emission displays the behavior of excitonic luminescence from cubic GaN. A cubic-related donor-acceptor transition at {approx}3.16 eV is also observed, together with a broad blue band around 2.9 eV, previously reported in heavily Mg-doped 3C-GaN(001)

• OSTI ID: 20662077
• Journal Information: Journal of Applied Physics, Vol. 96, Issue 7; Other Information: DOI: 10.1063/1.1787142; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DOPED MATERIALS
EV RANGE 01-10
FILMS
GALLIUM NITRIDES
IMPURITIES
LAYERS
MAGNESIUM
MOLECULAR BEAM EPITAXY
PHASE TRANSFORMATIONS
PHONONS
PHOTOLUMINESCENCE
PLASMA
SEMICONDUCTOR MATERIALS
SPECTRA
SUBSTRATES
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ZINC SULFIDES