Microstructure of epitaxial MnAs films on GaAs(001): An in situ x-ray study

Journal Article · Wed Dec 01 00:00:00 EST 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1804621· OSTI ID:20658083

Jenichen, B; Satapathy, D; Braun, W; Daeweritz, L; Ploog, K H ^[1]

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1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)

We present an analysis of thin MnAs films on GaAs(001) by the x-ray grazing incidence diffraction during molecular-beam epitaxy and immediately after deposition near the growth temperature. Separate MnAs peaks are detected for average thicknesses starting from {approx_equal}1 monolayer, indicating the formation of a relaxed MnAs lattice. The variation of the position and shape of the MnAs peaks during growth yields the time dependence of relaxation and island sizes. The MnAs domains of different orientations are detected and their amount is analyzed quantitatively. A line broadening due to the size and strain effects is observed. Both the effects are separated for each of the main directions along the interface. The lateral domain sizes of 10-40 nm and strain values of 0.2%-0.6% are found in the MnAs films. We find that the positions of the misfit dislocations at the interface are correlated.

• OSTI ID: 20658083
• Journal Information: Journal of Applied Physics, Vol. 96, Issue 11; Other Information: DOI: 10.1063/1.1804621; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DEPOSITION
DISLOCATIONS
GALLIUM ARSENIDES
INTERFACES
LATTICE PARAMETERS
LAYERS
LINE BROADENING
MAGNETIC ISLANDS
MAGNETIC SEMICONDUCTORS
MANGANESE ARSENIDES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
MORPHOLOGY
RELAXATION
THICKNESS
THIN FILMS
TIME DEPENDENCE
X-RAY DIFFRACTION