Comprehensive Electron-optical Characterization of an X-ray Photoemission Electron Microscope
- Experimental Systems Group, Advanced Light Source, Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Center for X-Ray Optics, Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
Typically the performance of Photoemission Electron Microscopes (PEEM) is reported as one number, representative of a microscope's ultimate performance under an ideal set of conditions. Often a simple Rayleigh criterion is used which defines the spatial resolution approximately as the minimum distance of two still distinguishable features. However, the ability of an instrument to provide meaningful spectroscopic and microscopic information depends on the contrast loss of a pattern over a much wider range of spatial frequencies. For example, the chemical signature of one area on the sample can be contaminated from an adjacent area although both areas are still easily distinguishable in a microscopic image. We report here on a more comprehensive measurement of the PEEM-II instrument at beamline 7.3.1.1 at the Advanced Light Source (ALS) that examines the response of the instrument to a wide range of experimental conditions.
- OSTI ID:
- 20652861
- Journal Information:
- AIP Conference Proceedings, Vol. 705, Issue 1; Conference: 8. international conference on synchrotron radiation instrumentation, San Francisco, CA (United States), 25-29 Aug 2003; Other Information: DOI: 10.1063/1.1758034; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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