Secondary-ion emission from III-V semiconductive materials under MeV-energy heavy-ion bombardment

Journal Article · Fri Oct 01 00:00:00 EDT 2004 · Physical Review. A

DOI:https://doi.org/10.1103/PhysRevA.70.042903· OSTI ID:20646380

Ninomiya, Satoshi; Imada, Chikage; Nagai, Masafumi; Nakata, Yoshihiko; Imanishi, Nobutsugu ^[1]

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1. Department of Nuclear Engineering, Kyoto University, Sakyo, Kyoto 606-8501 (Japan)

Secondary-ion emission from III-V semiconductive chemical compounds (InP, InAs, and InSb) has been experimentally studied at heavy-ion energies from 0.5 to 5.0 MeV, where electronic collision is a dominant process. Various secondary ions such as large cluster ions and atomic ions were observed. Yields of In atomic and cluster ions depend scantly on the incident energy, and those of group-V atomic ions and of cluster ions containing group-V elements can be expressed by an exponential function of S{sub e}{sup -1}, where S{sub e} is the electronic stopping power. This fact shows that the ionization probabilities of the atoms and the clusters whose ionization potentials are higher than the work functions of target materials are increased by transient electronic excitation induced by ion bombardment. The energy distributions of the atomic ions show that the singly charged atomic ions are emitted through the linear collision cascade process even at MeV incident energies, and the multiply charged ions are produced by a projectile-induced simultaneous process of ionization and recoiling of atoms on the target surface. The yield dependences of the cluster ions on the electronic stopping power and on the cluster size are so much different from those for SiO{sub 2}. This fact precludes the multiple-bond-breaking process applied to the insulating material. Structural instabilities caused by high-density electronic excitations, which are known to take place in GaAs irradiated by slow multiply charged ions or lasers, are a possible cause of the cluster-ion emission from the semiconductive compounds at the MeV energy range.

• OSTI ID: 20646380
• Journal Information: Physical Review. A, Vol. 70, Issue 4; Other Information: DOI: 10.1103/PhysRevA.70.042903; (c) 2004 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1050-2947
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
ATOMIC IONS
ATOMS
COLLISIONS
ENERGY SPECTRA
EXCITATION
GALLIUM ARSENIDES
HEAVY IONS
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM IONS
INDIUM PHOSPHIDES
INSTABILITY
ION EMISSION
ION PAIRS
IONIZATION
IONIZATION POTENTIAL
IRRADIATION
MEV RANGE
PROBABILITY
SEMICONDUCTOR MATERIALS
SILICA
SILICON OXIDES
STOPPING POWER
SURFACES
WORK FUNCTIONS