Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

Journal Article · Mon Mar 28 00:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1875759· OSTI ID:20637046

Chaldyshev, V V; Nielsen, B; Mendez, E E; Musikhin, Yu G; Bert, N A; Ma, Zh; Holden, Todd ^[1]

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1. Brooklyn College of the City University of New York, Brooklyn, New York 11210, and Ioffe Physico-Technical Institute, St. Petersburg 194021 (Russian Federation)

1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

• OSTI ID: 20637046
• Journal Information: Applied Physics Letters, Vol. 86, Issue 13; Other Information: DOI: 10.1063/1.1875759; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
DISLOCATIONS
ELLIPSOMETRY
EV RANGE 01-10
GALLIUM ARSENIDES
GALLIUM NITRIDES
HETEROJUNCTIONS
INTERFERENCE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
RAMAN SPECTRA
RECOMBINATION
ROUGHNESS
SAPPHIRE
SEMICONDUCTOR MATERIALS
SURFACES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
ZINC SULFIDES