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Title: Growth of heteroepitaxial ZnO thin film and ZnO/(Mg,Zn)O nanomultilayer by off-axis rf magnetron sputtering

Journal Article · · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
DOI:https://doi.org/10.1116/1.1814105· OSTI ID:20636949
; ; ; ;  [1]
  1. Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

Heteroepitaxial ZnO thin film was deposited on a sapphire (001) substrate using off-axis radio-frequency magnetron sputtering. The crystallinity of the ZnO thin film was affected by deposition pressure, substrate temperature, and postannealing temperature. The low-temperature photoluminescence of heteroepitaxial ZnO thin film grown under optimum conditions of 650 deg. C, 120 W, and 10 mTorr showed strong UV emission at 3.36 eV with a full width at half maximum (FWHM) of 16.0 meV. After annealing in an O{sub 2} ambient at 950 deg. C, the high-resolution x-ray diffraction rocking curve FWHM of the ZnO thin film markedly decreased from 0.38 deg. to 0.19 deg. although UV emission decreased. These results indicated that a heteroepitaxial ZnO thin film with strong UV emission can be grown by off-axis rf sputtering and that O{sub 2} annealing helps enhance the crystallinity of ZnO thin film which can be used as a buffer layer in ZnO/(Mg,Zn)O multiple quantum well structures. To demonstrate an application of the ZnO thin film, a ZnO/(Mg,Zn)O nanomultilayer was grown on a ZnO-buffered sapphire substrate and its optical properties were measured.

OSTI ID:
20636949
Journal Information:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 23, Issue 1; Other Information: DOI: 10.1116/1.1814105; (c) 2005 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
Country of Publication:
United States
Language:
English