Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor

Journal Article · Wed Sep 01 00:00:00 EDT 2004 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.1781183· OSTI ID:20636567

Deshpande, Anand; Inman, Ronald; Jursich, Gregory; Takoudis, Christos ^[1]

---

1. American Air Liquide, Chicago Research Center, Countryside, Illinois 60525 and Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

In this work thin films of hafnium oxide are deposited on Si(100) substrates by means of atomic layer deposition (ALD) using tetrakis(diethylamino)hafnium and water vapor at substrate temperatures of 250-350 deg. C. Our system capabilities include fast transient delivery of reactive fluids, real-time vapor phase detection (in situ tunable diode laser hygrometer), precursor thermochemical capabilities, and ppt level elemental analysis by inductive coupling plasma mass spectrometry. The composition, purity, and other properties of the films and resulting interfaces are determined using x-ray and Fourier transform infrared spectroscopies, Z-contrast imaging and electron energy loss spectroscopy in a scanning transmission electron microscope with A scale resolution, and spectroscopic ellipsometry. The observed ALD rate is {approx}1.4 A per cycle. The nonuniformity across the film is less than 4%. Negligible carbon contamination is found in the resulting stoichiometric films under all conditions studied. The pulse sequence was optimized to prevent disastrous particulate problems while still minimizing purge times. The film deposition is investigated as a function of substrate temperature and reagent pulsing characteristics. A mild inverse temperature dependence of the ALD rate is observed. The initial stage of the HfO{sub 2} growth is investigated in detail.

• OSTI ID: 20636567
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 22, Issue 5; Other Information: DOI: 10.1116/1.1781183; (c) 2004 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ELLIPSOMETRY
ENERGY-LOSS SPECTROSCOPY
FOURIER TRANSFORM SPECTROMETERS
HAFNIUM OXIDES
ICP MASS SPECTROSCOPY
INFRARED SPECTRA
SCANNING ELECTRON MICROSCOPY
SILICON
STOICHIOMETRY
TEMPERATURE DEPENDENCE
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
WATER VAPOR
X-RAY SPECTROSCOPY