Near room temperature droplet epitaxy for fabrication of InAs quantum dots

Journal Article · Mon Dec 13 00:00:00 EST 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1839642· OSTI ID:20634551

Kim, Jong Su; Koguchi, Nobuyuki ^[1]

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1. Nanomaterials Laboratory, National Institute for Materials Science, Tsukuba 305-0047 (Japan)

By using the droplet epitaxy method, we succeed in fabricating the InAs quantum dots (QDs) with the spatial density of 4x10{sup 10}/cm{sup 2} and an average lateral size of 20 nm on GaAs (001) at the droplets deposition temperature of 50 deg. C and subsequent annealing process under As{sub 4} flux. These QDs shows the intense photoluminescence even at room temperature indicating that high-quality InAs QDs can be fabricated by near room temperature droplets deposition and crystallization process by 400 deg. C in situ annealing.

• OSTI ID: 20634551
• Journal Information: Applied Physics Letters, Vol. 85, Issue 24; Other Information: DOI: 10.1063/1.1839642; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
CRYSTALLIZATION
DEPOSITION
DROPLETS
FABRICATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K