Dimensional structural transition in CdTe/Cd{sub x}Zn{sub 1-x}Te nanostructures
- Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)
CdTe nanostructures were grown on Cd{sub x}Zn{sub 1-x}Te buffer layers by using molecular-beam epitaxy and atomic-layer epitaxy. The atomic force microscopy image showed that uniform CdTe quantum dots were formed on ZnTe buffer layer. Photoluminescence measurements showed that the excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/Cd{sub x}Zn{sub 1-x}Te nanostructure shifted to a higher energy with increasing Cd mole fraction. The activation energy of the electrons confined in the CdTe/ZnTe quantum dots was higher than those of electrons in CdTe/Cd{sub x}Zn{sub 1-x}Te nanostructures. These results can help improve understanding of the dimensional structural transition in CdTe/Cd{sub x}Zn{sub 1-x}Te nanostructures.
- OSTI ID:
- 20634494
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 23; Other Information: DOI: 10.1063/1.1832749; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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