As-doped p-type ZnO produced by an evaporation/sputtering process
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433 and Semiconductor Research Center, Wright State University, Dayton, Ohio 45435 (United States)
Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn{sub 3}As{sub 2} on a fused-quartz substrate at 350 deg. C; and (2) sputtering of ZnO with substrate held at 450 deg. C. The electrical characteristics include: resistivity of 0.4 {omega} cm, a mobility of 4 cm{sup 2}/V s, and a hole concentration of about 4x10{sup 18} cm{sup -3}. This resistivity is among the best (lowest) ever reported for p-type ZnO. Secondary-ion mass spectroscopic analysis gives an average As concentration about 5x10{sup 19} cm{sup -3}, and a simple one-band fit of the temperature-dependent mobility curve yields an acceptor concentration of about 9x10{sup 19} cm{sup -3}. This is strong evidence that the p-type dopant involves As, although it is not clear whether the acceptor is simply As{sub O} or the recently suggested As{sub Zn}-2V{sub Zn}.
- OSTI ID:
- 20634478
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 22; Other Information: DOI: 10.1063/1.1825615; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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