Formation of columnar (In,Ga)As quantum dots on GaAs(100)
- eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)
Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced.
- OSTI ID:
- 20634312
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 14; Other Information: DOI: 10.1063/1.1801172; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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