Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

Journal Article · Mon Aug 30 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1789236· OSTI ID:20632751

Sun, Z Z; Yoon, S F; Yew, K C; Bo, B X; Yan, D A; Tung, C -H ^[1]

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1. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by {approx}170 nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed. Lasing occurs via the ground state at {approx}1.2 {mu}m, with threshold current density of 2.1 kA/cm{sup 2} and maximum output power of 16 mW.

• OSTI ID: 20632751
• Journal Information: Applied Physics Letters, Vol. 85, Issue 9; Other Information: DOI: 10.1063/1.1789236; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENT DENSITY
GALLIUM ARSENIDES
GALLIUM NITRIDES
GROUND STATES
INDIUM ARSENIDES
INDIUM NITRIDES
LASERS
LAYERS
MOLECULAR BEAM EPITAXY
OPERATION
OPTIMIZATION
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT
WAVELENGTHS