InAs/InP quantum dots emitting in the 1.55 {mu}m wavelength region by inserting submonolayer GaP interlayers

Journal Article · Mon Aug 23 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1785859· OSTI ID:20632745

Gong, Q; Noetzel, R; Veldhoven, P.J. van; Eijkemans, T J; Wolter, J H ^[1]

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1. eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

We report on the growth of InAs quantum dots (QDs) in GaInAsP on InP (100) substrates by chemical-beam epitaxy, with emission wavelength in the 1.55 {mu}m region. Submonolayer coverage of GaP on the GaInAsP buffer before deposition of the InAs QDs results in most efficient suppression of As/P exchange during InAs growth and subsequent growth interruption under arsenic flux. Continuous wavelength tuning from above 1.6 to below 1.5 {mu}m is thus achieved by varying the coverage of the GaP interlayer within the submonolayer range. Temperature dependent photoluminescence reveals distinct zero-dimensional carrier confinement and indicates that the InAs QDs are free of defects and dislocations.

• OSTI ID: 20632745
• Journal Information: Applied Physics Letters, Vol. 85, Issue 8; Other Information: DOI: 10.1063/1.1785859; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC
ATOMIC FORCE MICROSCOPY
DEPOSITION
DISLOCATIONS
EPITAXY
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE