Temperature-independent switching rates for a random telegraph signal in a silicon metal-oxide-semiconductor field-effect transistor at low temperatures
- Department of Physics, Oberlin College, Oberlin, Ohio 44074 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185-1083 (United States)
We have observed discrete random telegraph signals (RTSs) in the drain voltages of three, nominally 1.25 {mu}mx1.25 {mu}m, enhancement-mode p-channel metal-oxide-semiconductor transistors operated in strong inversion in their linear regimes with constant drain-current and gate-voltage bias, for temperatures ranging from 4.2 to 300 K. The switching rates for all RTSs observed above 30 K were thermally activated. The switching rate for the only RTS observed below 30 K was thermally activated above 30 K but temperature independent below 10 K. This response is consistent with a crossover from thermal activation to tunneling at low temperatures. Implications are discussed for models of change exchange between the Si and the near-interfacial SiO{sub 2}. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20216501
- Journal Information:
- Applied Physics Letters, Vol. 76, Issue 22; Other Information: PBD: 29 May 2000; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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