Multiphoton photochemical reactions during laser induced deposition of silicon thin film
- Technion-Israel Inst. of Technology, Haifa (Israel)
Silicon deposition via decomposition of SiH{sub 4} molecules induced by excimer laser irradiation has been previously reported to be controlled by a two photon absorption process. This behavior was found at a total pressure lower than 5 Torr. At higher pressures the absorbed intensity depended linearly on the incident intensity. However, a multiphoton chemical reaction is indicated by a non-linear dependence of the deposition rate on laser energy. A different non-linear dependence of the deposition rate on laser energy was found in the work during the investigation of the mechanism of silicon thin films deposition by laser irradiation of a silane gas diluted with argon (15% SiH{sub 4}/Ar). The Si films were deposited by a focused laser beam irradiating in parallel to silicon and silicon dioxide substrates at a gas flow rate of 20 SCCM, total pressure of 60 Torr and a repetition rate of 15 Hz. At laser energies higher than 160 mJ/cm{sup 2} the rate depended strongly on the laser energy. A 3/2 power was found in absorption measurements carried out at the same pressure under flow conditions and for several repetition rates at average laser intensity above 300 mW. This kind of behavior is typical of a multiphoton absorption process involving saturation effects caused by focusing of the laser beam. Below 300 mW the power dependence indicated a two-photon absorption process. From the observed photochemical yield the authors found the value of 5.7 {times} 10{sup {minus}44} cm{sup 4} sec. molec.{sup {minus}1} for the two-photon absorption cross section.
- OSTI ID:
- 201314
- Report Number(s):
- CONF-930722-; ISBN 0-8194-1266-X; TRN: IM9613%%291
- Resource Relation:
- Conference: Annual meeting of the Society of Photo-Optical Instrumentation Engineers (SPIE), San Diego, CA (United States), 11-16 Jul 1993; Other Information: PBD: 1993; Related Information: Is Part Of Optical materials technology for energy efficiency and solar energy conversion XII; Lampert, C.M. [ed.] [Lawrence Berkeley Lab., CA (United States). Energy and Environment Div.]; PB: 401 p.; Proceedings/SPIE, Volume 2017
- Country of Publication:
- United States
- Language:
- English
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