High-quality microcrystalline silicon-carbide films prepared by photo-CVD method using ethylene gas as a carbon source
Hydrogenated boron-doped microcrystalline silicon-carbide (p-{micro}c-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SIH{sub 4}), hydrogen (H{sub 2}), diborane (B{sub 2}H{sub 6}), and ethylene (C{sub 2}H{sub 4}) gases. Since the photo-CVD is a mild process ({approximately} 10 mW/cm{sup 2}), the authors can avoid the ion damage of the film, which is inevitable during the deposition of {micro}c-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 x 10{sup {minus}1} S/cm, together with an optical bandgap of 2 eV, was obtained by the C{sub 2}H{sub 4} addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that the p-{micro}c-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. They investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-{micro}c-SiC:H films.
- Research Organization:
- Korea Advanced Inst. of Science and Technology, Taejon (KR)
- Sponsoring Organization:
- Korea Electric Power Research Institute
- OSTI ID:
- 20107960
- Resource Relation:
- Conference: 1999 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/05/1999--04/09/1999; Other Information: PBD: 1999; Related Information: In: Amorphous and heterogeneous silicon thin films: Fundamentals to devices -- 1999. Materials Research Society symposium proceedings: Volume 557, by Branz, H.M.; Collins, R.W.; Okamoto, Hiroaki; Guha, S.; Schropp, R. [eds.], 908 pages.
- Country of Publication:
- United States
- Language:
- English
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