The properties of a-SiC:H and a-SiGe:H films deposited by 55 kHz PECVD
The deposition processes and the properties of a-SiC:H and a-SiGe:H films in 55 kHz glow discharge were investigated. The analysis of deposition rate and RBS measurements showed that the chemical reactions between SiH{sub n} spices and CH{sub 4} control the incorporation of C in a-SiC:H films. High deposition rates of a-SiC:H and a-SiGe:H films fabricated by 55 kHz PECVD is caused by the increase of radical fluxes to the growth surface. The specific features of a-SiC:H and a-SiGe:H microstructure were revealed by IR and AFM analysis. In a-SiC:H films the islands of low size were distinguished on the surfaces of large islands. The large variation of the total hydrogen content in a-SiGe:H did not affect the optical bandgap, while the hydrogen related microstructure controlled the electronic properties such as dark conductivity, {eta}{mu}{tau} product, defect density and Urbach slope. The results of optoelectronic properties and SW effect measurements of 55 kHz a-SiC:H and a-SiGe:H films demonstrated the increased stability in comparison with a-Si:H.
- Research Organization:
- Inst. of Electronic Technology, Moscow (RU)
- Sponsoring Organization:
- Netherlands Organization for Scientific Research (NWO)
- OSTI ID:
- 20107884
- Resource Relation:
- Conference: 1999 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/05/1999--04/09/1999; Other Information: PBD: 1999; Related Information: In: Amorphous and heterogeneous silicon thin films: Fundamentals to devices -- 1999. Materials Research Society symposium proceedings: Volume 557, by Branz, H.M.; Collins, R.W.; Okamoto, Hiroaki; Guha, S.; Schropp, R. [eds.], 908 pages.
- Country of Publication:
- United States
- Language:
- English
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