Characterization of thick 4H-SiC hot-wall CVD layers
Epitaxial 4H-SiC layers suitable for high power devices have been grown in a hot-wall chemical-vapor deposition (CVD) system. These layers were subsequently characterized for many parameters important in device development and production. The uniformity of both thickness and doping is presented. Doping trends vs. temperature and growth rate is shown for the p-type dopant used. The n-type dopant drops in concentration with increasing temperature or increasing growth rate. In contrast, the p-type dopant increases in concentration with decreasing temperature or increasing growth rate. A simple descriptive model for this behavior is presented. The outcome from capacitance-voltage and SIMS measurements demonstrate that transitions from n to n{sup {minus}}, or p to p{sup {minus}}, and even n to p levels can be made quickly without adjustment to growth conditions. The ability to produce sharp transitions without process changes avoids degrading the resulting surface morphology or repeatability of the process. Avoiding process changes is particularly important in growth of thick layers since surface roughness tends to increase with layer thickness. Device results from diodes producing two different blocking voltages in excess of 5 kV is also shown. The higher voltage diodes exhibited a breakdown behavior which was near the theoretical limit for the epitaxial layer thickness and doping level grown.
- Research Organization:
- Cree Research, Inc., Durham, NC (US)
- Sponsoring Organization:
- Defense Advanced Research Project Agency; US Department of the Navy, Office of Naval Research (ONR)
- OSTI ID:
- 20104705
- Resource Relation:
- Conference: 1999 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/05/1999--04/08/1999; Other Information: PBD: 1999; Related Information: In: Wide-band semiconductors for high-power, high-frequency and high-temperature applications -- 1999. Materials Research Society symposium proceedings: Volume 572, by Binari, S.C.; Burk, A.A.; Melloch, M.R.; Nguyen, C. [eds.], 575 pages.
- Country of Publication:
- United States
- Language:
- English
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