Doping dependence of the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/sapphire (0001) using a scanning thermal microscope
The authors have measured the doping concentration dependence of the room temperature thermal conductivity ({kappa}) of two series of n-GaN/sapphire (0001) fabricated by hydride vapor phase epitaxy (HVPE). In both sets {kappa} decreased linearly with log n, the variation being about a factor two decrease in {kappa} for every decade increase in n. {kappa} {approx} 1.95 W/cm-K was obtained for one of the most lightly doped samples (n = 6.9 x 10{sup 16} cm{sup {minus}3}), higher than the previously reported {kappa} {approx} 1.7--1.8 W/cm-K on lateral epitaxial overgrown material [V.A. Asnin et al, Appl. Phys. Lett. 75, 1240 (1999)] and {kappa} {approx} 1.3 W/cm-K on a thick HVPE sample [E.K. Sichel and J.I. Pankove, J. Phys. Chemc. Solids 38, 330 (1977)]. The decrease in the lattice component of {kappa} due to increased phonon scattering from both the impurities and free electrons outweighs the increase in the electronic contribution to {kappa}.
- Research Organization:
- City Univ. of New York, Brooklyn, NY (US)
- Sponsoring Organization:
- US Department of the Navy, Office of Naval Research (ONR); US Department of the Air Force
- OSTI ID:
- 20104567
- Resource Relation:
- Conference: 1999 Materials Research Society Fall Meeting, Boston, MA (US), 11/28/1999--12/03/1999; Other Information: PBD: 2000; Related Information: In: GaN and related alloys -- 1999. Materials Research Society symposium proceedings, Volume 595, by Myers, T.H.; Feenstra, R.M.; Shur, M.S.; Amano, Hiroshi [eds.], [1050] pages.
- Country of Publication:
- United States
- Language:
- English
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