Electrical characterization of thin single crystals of sexithiophene
Extremely thin, single crystals of sexithiophene (6T), 2--14 nm thick and 2--5 {micro}m in length and width, can be grown on flat gold substrates by thermal evaporation. The thickness dimension corresponds to 1--6 monolayers (ML) of 6T molecules arranged with their long axes nearly perpendicular to the substrate. The authors have measured the current-voltage (I-V) characteristics through the thickness of these crystallites, after doping them with iodine, using conducting probe atomic force microscopy (CPAFM). The I-V traces are linear in the {+-}50 mV regime. The conductance (I/V) of the doped 6T crystals does not decrease monotonically with increasing thickness as might be expected, but instead has a maximum at 3 ML thickness, and they discuss several possible explanations for this observation.
- Research Organization:
- Univ. of Minnesota, Minneapolis, MN (US)
- Sponsoring Organization:
- National Science Foundation (NSF); US Department of Defense
- OSTI ID:
- 20034111
- Resource Relation:
- Conference: Electrical, Optical, and Magnetic Properties of Organic Solid-State Materials IV, Boston, MA, (US), 12/01/1997--12/05/1997; Other Information: PBD: 1998; Related Information: In: Electrical, optical, and magnetic properties of organic solid-state materials IV. Materials Research Society, symposium proceedings Volume 488, by Reynolds, J.R.; Jen, A.K.Y.; Rubner, M.F.; Chiang, L.Y.; Dalton, L.R. [eds.], 977 pages.
- Country of Publication:
- United States
- Language:
- English
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