High voltage GaN Schottky rectifiers
- and others
Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550 and >2,000V, respectively have been fabricated. The on-state resistance, R{sub ON}, was 6 m{Omega}{center_dot}cm{sup 2} and 0.8{Omega} cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup {minus}2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-stage voltages were 3.5 V for the 550 V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2 {mu}s for devices switched from a forward current density of {approximately}500 A{center_dot}cm{sup {minus}2} to a reverse bias of 100 V.
- Research Organization:
- Univ. of Florida, Gainesville, FL (US)
- Sponsoring Organization:
- National Science Foundation (NSF); Defense Advanced Research Project Agency; Electric Power Research Institute; US Department of the Navy, Office of Naval Research (ONR); National Science Council of Republic of China; USDOE
- OSTI ID:
- 20030430
- Journal Information:
- IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers), Vol. 47, Issue 4; Other Information: PBD: Apr 2000; ISSN 0018-9383
- Country of Publication:
- United States
- Language:
- English
Similar Records
Temperature dependence and current transport mechanisms in Al{sub x}Ga{sub 1-x}N Schottky rectifiers
Processing and device performance of GaN power rectifiers