Use of new ENDF/B-VI proton and neutron cross sections for single event upset calculations

Journal Article · Wed Dec 01 00:00:00 EST 1999 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/23.819097· OSTI ID:20014689

Chadwick, M B; Normand, E

Single-event upsets (SEU) in microelectronics are calculated from newly-developed silicon nuclear reaction recoil data for incident protons and neutrons with energies up to 150 MeV. This paper focuses on the nuclear reaction physics that is important for calculating recoil spectra, and burst generation rate spectra. Comparisons are made with previous results, obtained from intranuclear cascade calculations as well as from previous ENDF data below 20 MeV, to demonstrate new features in the present calculations. Calculated SEU cross sections are compared with measured data.

• Research Organization: Los Alamos National Lab., NM (US)
• OSTI ID: 20014689
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Vol. 46, Issue 6Pt1; Conference: 1999 IEEE Nuclear and Space Radiation Effects Conference, Norfolk, VA (US), 07/12/1999--07/16/1999; Other Information: PBD: Dec 1999; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
PHYSICAL RADIATION EFFECTS
FAILURES
NUCLEAR DATA COLLECTIONS
MICROELECTRONIC CIRCUITS
PROTON REACTIONS
NEUTRON REACTIONS
RECOILS