Observations of accelerated silicon carbide recession by oxidation at high water-vapor pressures
Journal Article
·
· Journal of the American Ceramic Society
A study of the exposure of SiC at 1,200 C and high water-vapor pressures (1.5 atm) has shown SiC recession rates that exceed what is predicted based on parabolic oxidation at water-vapor pressures of less than or equal to {approximately}1 atm. After exposure to these conditions, distinct silica-scale structures are observed; thick, porous, nonprotective cristobalite scales form above a thin, dense silica layer. The porous cristobalite thickens with exposure time, while the thickness of the underlying dense layer remains constant. These observations suggest a moving-boundary phenomenon that is controlled by the rapid conversion of dense vitreous silica to a porous, nonprotective crystalline SiO{sub 2}.
- Research Organization:
- Oak Ridge National Lab., TN (US)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 20014355
- Journal Information:
- Journal of the American Ceramic Society, Vol. 83, Issue 1; Other Information: PBD: Jan 2000; ISSN 0002-7820
- Country of Publication:
- United States
- Language:
- English
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