Structural and electrical properties of PLZT films on ITO-coated glass prepared by a sol-gel process[Lead Lanthanum Zirconium Titanates, Indium Tin Oxides]
PLZT films prepared by a sol-gel process were fabricated on indium tin oxide (ITO)-coated glass substrates using rapid thermal annealing (RTA). The films crystallized into the perovskite phase when annealed at 750 C for 5 min. X-ray diffraction (XRD) and Raman spectroscopy results indicate that the morphotropic phase boundary of PLZT films shifts toward the Ti-rich side, in contrast to that of bulk ceramics. A dielectric constant of 1,270 for the 2/55/45 composition was the maximum value observed. With increasing Zr content in the 2 mol% La modified films, the coercive field decreased from 52.9 to 30 kV/cm and the remanent polarization increased from 22.7 to 50.6 {micro}C/cm{sup 2}. Optical transmittance increased by increasing optical isotropy as the Zr content increased.
- Research Organization:
- Yonsei Univ., Seoul (KR)
- OSTI ID:
- 20006466
- Journal Information:
- Materials Research Bulletin, Vol. 34, Issue 9; Other Information: PBD: 1 Jul 1999; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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