Fully Inkjet‐Printed, 2D Materials‐Based Field‐Effect Transistor for Water Sensing

Journal Article · Tue Aug 15 00:00:00 EDT 2023 · Advanced Materials Technologies

DOI:https://doi.org/10.1002/admt.202301288· OSTI ID:1995928

Sui, Xiaoyu ^[1]; Rangnekar, Sonal V. ^[2]; Lee, Jaesung ^[3]; Liu, Stephanie E. ^[2]; Downing, Julia R. ^[2]; Chaney, Lindsay E. ^[2]; Yan, Xiaodong ^[2]; Jang, Hyun‐June ^[4]; Pu, Haihui ^[4]; Shi, Xiaoao ^[5]; Zhou, Shiyu ^[6]; Hersam, Mark C. ^[7]; Chen, Junhong  ^[4]

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1. Pritzker School of Molecular Engineering University of Chicago Chicago IL 60637 USA, Chemical Sciences and Engineering Division Physical Sciences and Engineering Directorate Argonne National Laboratory Lemont IL 60439 USA, Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA
2. Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA
3. Department of Industrial and Systems Engineering University of Wisconsin–Madison Madison WI 53706 USA, Wm Michael Barnes ’64 Department of Industrial and Systems Engineering Texas A&,M University College Station TX 77843 USA
4. Pritzker School of Molecular Engineering University of Chicago Chicago IL 60637 USA, Chemical Sciences and Engineering Division Physical Sciences and Engineering Directorate Argonne National Laboratory Lemont IL 60439 USA
5. Pritzker School of Molecular Engineering University of Chicago Chicago IL 60637 USA
6. Department of Industrial and Systems Engineering University of Wisconsin–Madison Madison WI 53706 USA
7. Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA, Department of Chemistry Northwestern University Evanston IL 60208 USA, Department of Electrical and Computer Engineering Northwestern University Evanston IL 60208 USA

Abstract Despite significant progress in solution‐processing of 2D materials, it remains challenging to reliably print high‐performance semiconducting channels that can be efficiently modulated in a field‐effect transistor (FET). Herein, electrochemically exfoliated MoS ₂ nanosheets are inkjet‐printed into ultrathin semiconducting channels, resulting in high on/off current ratios up to 10 ³ . The reported printing strategy is reliable and general for thin film channel fabrication even in the presence of the ubiquitous coffee‐ring effect. Statistical modeling analysis on the printed pattern profiles suggests that a spaced parallel printing approach can overcome the coffee‐ring effect during inkjet printing, resulting in uniform 2D flake percolation networks. The uniformity of the printed features allows the MoS ₂ channel to be hundreds of micrometers long, which easily accommodates the typical inkjet printing resolution of tens of micrometers, thereby enabling fully printed FETs. As a proof of concept, FET water sensors are demonstrated using printed MoS ₂ as the FET channel, and printed graphene as the electrodes and the sensing area. After functionalization of the sensing area, the printed water sensor shows a selective response to Pb ²⁺ in water down to 2 ppb. This work paves the way for additive nanomanufacturing of FET‐based sensors and related devices using 2D nanomaterials.

• Sponsoring Organization: USDOE
• OSTI ID: 1995928
• Alternate ID(s): OSTI ID: 2221910
• Journal Information: Advanced Materials Technologies, Journal Name: Advanced Materials Technologies Vol. 8 Journal Issue: 22; ISSN 2365-709X
• Publisher: Wiley Blackwell (John Wiley & Sons)
• Country of Publication: United States
• Language: English