Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications
- College of Materials Science and Engineering Shenzhen Key Laboratory of New Information Display and Storage Materials Shenzhen University Shenzhen 518060 China
- College of Materials Science and Engineering Shenzhen Key Laboratory of New Information Display and Storage Materials Shenzhen University Shenzhen 518060 China, State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China
- Department of Physics Applied Physics, and Astronomy Rensselaer Polytechnic Institute Troy NY 12180 USA
- State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China
Abstract Phase‐change random‐access memory (PCRAM) devices suffer from pronounced resistance drift originating from considerable structural relaxation of phase‐change materials (PCMs), which hinders current developments of high‐capacity memory and high‐parallelism computing that both need reliable multibit programming. This work realizes that compositional simplification and geometrical miniaturization of traditional GeSbTe‐like PCMs are feasible routes to suppress relaxation. While to date, the aging mechanisms of the simplest PCM, Sb, at nanoscale, have not yet been unveiled. Here, this work demonstrates that in an optimal thickness of only 4 nm, the thin Sb film can enable a precise multilevel programming with ultralow resistance drift coefficients, in a regime of ≈10 −4 –10 −3 . This advancement is mainly owed to the slightly changed Peierls distortion in Sb and the less‐distorted octahedral‐like atomic configurations across the Sb/SiO 2 interfaces. This work highlights a new indispensable approach, interfacial regulation of nanoscale PCMs, for pursuing ultimately reliable resistance control in aggressively‐miniaturized PCRAM devices, to boost the storage and computing efficiencies substantially.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- SC0002623
- OSTI ID:
- 1987579
- Alternate ID(s):
- OSTI ID: 1995325
- Journal Information:
- Advanced Science, Journal Name: Advanced Science Vol. 10 Journal Issue: 25; ISSN 2198-3844
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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