The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe

Shang, Jing; Murugesan, Magesh; Bigbee-Hansen, Samuel; Swain, Santosh K.; Duenow, Joel N.; Johnston, Steve; Beckman, Scott P.; Walker, Harvey H.; Antonio, Raine W.; McCloy, John S.

doi:10.1016/j.jallcom.2023.170625

Title: The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe

Journal Article · Thu May 18 00:00:00 EDT 2023 · Journal of Alloys and Compounds

DOI:https://doi.org/10.1016/j.jallcom.2023.170625· OSTI ID:1985629

Shang, Jing; Murugesan, Magesh; Bigbee-Hansen, Samuel; Swain, Santosh K.; Duenow, Joel N.;

; Beckman, Scott P.; Walker, Harvey H.; Antonio, Raine W.; McCloy, John S.

We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 10^17 cm-3 to 10^19 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n is approximately 2 x 10^18 cm-3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1985629

Report Number(s):: NREL/JA-5K00-85337; MainId:86110; UUID:a969cff1-dc90-4487-86c0-a031e8d973dd; MainAdminID:69781

Journal Information:: Journal of Alloys and Compounds, Vol. 960

Country of Publication:: United States

Language:: English

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