Investigation of AlGaN-Delta–GaN-Based UV Photodiodes in a Metal–Semiconductor–Metal Configuration for Efficient and Fast Solar Blind UV Sensing

Nwabunwanne, Solumtochukwu F.; Melanson, Bryan; Zhang, Jing; Donaldson, William R.

doi:10.1109/jqe.2023.3274705

Title: Investigation of AlGaN-Delta–GaN-Based UV Photodiodes in a Metal–Semiconductor–Metal Configuration for Efficient and Fast Solar Blind UV Sensing

Journal Article · Wed May 10 00:00:00 EDT 2023 · IEEE Journal of Quantum Electronics

DOI:https://doi.org/10.1109/jqe.2023.3274705· OSTI ID:1985252

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University of Rochester, NY (United States)
Rochester Institute of Technology, NY (United States)

Metal–semiconductor–metal (MSM) configured UV photodiodes (PD’s) were designed and fabricated on an AlGaN/GaN–based substrate for efficient and ultrafast UV detection. The purpose was to investigate the feasibility of obtaining efficient and ultrafast temporal response from these devices in the UV given the challenges associated with the formation of Schottky contacts on laterally oriented AlGaN/GaN thin films. Two sets of devices were implemented using Pt and Au as metal contacts with 5-µm finger width, 5-µm finger spacing, and a 50-µm x 50-µm active area. Spectral and voltage bias studies were done to establish the spectral profile and the effect of bias voltage on the responsivity of the detectors at 265 nm. Here, the best vertical MSM PD’s produced 0.6-A/W responsivity under 10-V bias voltage at 265 nm. Peak spectral responsivities were recorded as 1.35 A/W and 1.25 A/W at 240 nm for Pt and Au PD’s, respectively.

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Research Organization:: Univ. of Rochester, NY (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003856

OSTI ID:: 1985252

Journal Information:: IEEE Journal of Quantum Electronics, Vol. 59, Issue 4; ISSN 0018-9197

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

References (31)

Polarization assisted self-powered GaN-based UV photodetector with high responsivity Wang, Jiaxing; Chu, Chunshuang; Tian, Kangkai Photonics Research, Vol. 9, Issue 5 https://doi.org/10.1364/PRJ.418813	journal	April 2021
Observation of collisionless-to-collisional transition in colliding plasma jets with optical Thomson scattering Young, R. P.; Kuranz, C. C.; Froula, D. Physics of Plasmas, Vol. 26, Issue 1 https://doi.org/10.1063/1.5047218	journal	January 2019
Systematic Study on Aluminum Composition Nonuniformity in Aluminum Gallium Nitride Metal–Semiconductor–Metal Photodetectors Zhao, Yiming; Donaldson, William Raymond IEEE Transactions on Electron Devices, Vol. 65, Issue 10 https://doi.org/10.1109/TED.2018.2862901	journal	October 2018
Characterizing plasma conditions in radiatively heated solid-density samples with x-ray Thomson scattering Saunders, A. M.; Lahmann, B.; Sutcliffe, G. Physical Review E, Vol. 98, Issue 6 https://doi.org/10.1103/PhysRevE.98.063206	journal	December 2018
Calculation of carrier capture time of a quantum well in graded-index separate-confinement heterostructures Brum, J. A.; Weil, T.; Nagle, J. Physical Review B, Vol. 34, Issue 4 https://doi.org/10.1103/PhysRevB.34.2381	journal	August 1986
AlGaN metal–semiconductor–metal photodiodes Monroy, E.; Calle, F.; Muñoz, E. Applied Physics Letters, Vol. 74, Issue 22 https://doi.org/10.1063/1.123358	journal	May 1999
Ultrafast UV AlGaN Metal–Semiconductor–Metal Photodetector With a Response Time Below 25 ps Zhao, Yiming; Donaldson, William R. IEEE Journal of Quantum Electronics, Vol. 56, Issue 3 https://doi.org/10.1109/JQE.2020.2981043	journal	June 2020
Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer Dalapati, Pradip; Yamamoto, Kosuke; Kubo, Toshiharu Optik, Vol. 245 https://doi.org/10.1016/j.ijleo.2021.167691	journal	November 2021
Boosting the External Quantum Efficiency of AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes by Electrode Geometry Variation Nwabunwanne, Solumtochukwu F.; Donaldson, William R. IEEE Journal of Quantum Electronics, Vol. 57, Issue 6 https://doi.org/10.1109/JQE.2021.3117953	journal	December 2021
Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates Cao, Lina; Wang, Jingshan; Harden, Galen Applied Physics Letters, Vol. 112, Issue 26 https://doi.org/10.1063/1.5031785	journal	June 2018
Quantum Well Solar Cells: Principles, Recent Progress, and Potential Sayed, Islam; Bedair, S. M. IEEE Journal of Photovoltaics, Vol. 9, Issue 2 https://doi.org/10.1109/JPHOTOV.2019.2892079	journal	March 2019
Cross-Beam Energy Transfer Saturation by Ion Heating Hansen, A. M.; Nguyen, K. L.; Turnbull, D. Physical Review Letters, Vol. 126, Issue 7 https://doi.org/10.1103/PhysRevLett.126.075002	journal	February 2021
On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si Feng, Meixin; Wang, Jin; Zhou, Rui IEEE Journal of Selected Topics in Quantum Electronics, Vol. 24, Issue 6 https://doi.org/10.1109/JSTQE.2018.2815906	journal	November 2018
Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity Biyikli, N.; Kimukin, I.; Aytur, O. IEEE Photonics Technology Letters, Vol. 16, Issue 7 https://doi.org/10.1109/LPT.2004.829526	journal	July 2004
234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes Liu, Cheng; Ooi, Yu Kee; Islam, S. M. Applied Physics Letters, Vol. 112, Issue 1 https://doi.org/10.1063/1.5007835	journal	January 2018
Optimization of InGaN–GaN MQW Photodetector Structures for High-Responsivity Performance Pereiro, J.; Rivera, C.; Navarro, A. IEEE Journal of Quantum Electronics, Vol. 45, Issue 6 https://doi.org/10.1109/JQE.2009.2013140	journal	June 2009
Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells Yin, Jun; Li, Yang; Chen, Shengchang Advanced Optical Materials, Vol. 2, Issue 5 https://doi.org/10.1002/adom.201300463	journal	March 2014
Interdigitated electrode geometry variation and external quantum efficiency of GaN/AlGaN-based metal-semiconductor-metal UV photodetectors Nwabunwanne, Solumtochukwu F.; Donaldson, William R. Gallium Nitride Materials and Devices XVII https://doi.org/10.1117/12.2608355	conference	March 2022
Tunable UV upgrade on OMEGA EP Kruschwitz, Brian E.; Kwiatkowski, Joseph; Dorrer, Christophe High Power Lasers for Fusion Research V https://doi.org/10.1117/12.2505419	conference	March 2019
Silicon Photonics Design Chrostowski, Lukas; Hochberg, Michael https://doi.org/10.1017/CBO9781316084168	book	April 2015
Demonstration of Spectral Selectivity of Efficient and Ultrafast GaN/AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes Nwabunwanne, Solumtochukwu F.; Donaldson, William R. IEEE Transactions on Electron Devices, Vol. 69, Issue 12 https://doi.org/10.1109/TED.2022.3215641	journal	December 2022
The estimation of dislocation densities in metals from X-ray data Gay, P.; Hirsch, P. B.; Kelly, A. Acta Metallurgica, Vol. 1, Issue 3 https://doi.org/10.1016/0001-6160(53)90106-0	journal	May 1953
Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors Chatterjee, Abhishek; Khamari, Shailesh K.; Kumar, R. Superlattices and Microstructures, Vol. 148 https://doi.org/10.1016/j.spmi.2020.106733	journal	December 2020
Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform Lyu, Qifeng; Jiang, Huaxing; Lau, Kei May Optics Express, Vol. 29, Issue 6 https://doi.org/10.1364/OE.418843	journal	March 2021
AlGaN-based high-performance metal–semiconductor–metal photodetectors Gökkavas, Mutlu; Butun, Serkan; Tut, Turgut Photonics and Nanostructures - Fundamentals and Applications, Vol. 5, Issue 2-3 https://doi.org/10.1016/j.photonics.2007.06.002	journal	October 2007
An alternative method to determine the refractive index of AlxGa1−xN Engelbrecht, J. A. A.; Sephton, B.; Minnaar, E. Physica B: Condensed Matter, Vol. 480 https://doi.org/10.1016/j.physb.2015.08.047	journal	January 2016
Graphene/p-AlGaN/p-GaN electron tunnelling light emitting diodes with high external quantum efficiency Feng, Sirui; Dong, Binzhong; Lu, Yanghua Nano Energy, Vol. 60 https://doi.org/10.1016/j.nanoen.2019.04.007	journal	June 2019
Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect Wang, Kai; Qiu, Xinjia; Lv, Zesheng Photonics Research, Vol. 10, Issue 1 https://doi.org/10.1364/PRJ.444444	journal	December 2021
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates Gaska, R.; Yang, J. W.; Osinsky, A. Applied Physics Letters, Vol. 72, Issue 6 https://doi.org/10.1063/1.120852	journal	February 1998
Clean Ir(111) and Pt(111) electronic surface states: A first-principle fully relativistic investigation Dal Corso, Andrea Surface Science, Vol. 637-638 https://doi.org/10.1016/j.susc.2015.03.013	journal	July 2015
A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer Pokharia, Ravindra Singh; Sarkar, Ritam; Singh, Shivam IEEE Transactions on Electron Devices, Vol. 68, Issue 6 https://doi.org/10.1109/TED.2021.3073650	journal	June 2021

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42 ENGINEERING
AlGaN
GaN
efficient
spectral responsivity
ultrafast
PIN
MSM
UV
photodetector
vertically oriented
PD
Pt
Au

Title: Investigation of AlGaN-Delta–GaN-Based UV Photodiodes in a Metal–Semiconductor–Metal Configuration for Efficient and Fast Solar Blind UV Sensing

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