Properties of Donor Qubits in ZnO Formed by Indium-Ion Implantation

Wang, Xingyi; Zimmermann, Christian; Titze, Michael; Niaouris, Vasilis; Hansen, Ethan R.; D'ambrosia, Samuel H.; Vines, Lasse; Bielejec, Edward S.; Fu, Kai-Mei C.

doi:10.1103/PhysRevApplied.19.054090

Title: Properties of Donor Qubits in ZnO Formed by Indium-Ion Implantation

Journal Article · Tue May 30 00:00:00 EDT 2023 · Physical Review Applied

DOI:https://doi.org/10.1103/PhysRevApplied.19.054090· OSTI ID:1984913

^[1]; Zimmermann, Christian ^[1];

^[2];

^[1];

^[1]; D'ambrosia, Samuel H. ^[1];

^[3]; Bielejec, Edward S. ^[2];

^[4]

University of Washington, Seattle, WA (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
University of Oslo (Norway)
University of Washington, Seattle, WA (United States); Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)

Neutral shallow donors (D⁰) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here we report on the formation of D⁰ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with those of in situ–doped donors. Furthermore, the inhomogeneous linewidth of the donor-bound-exciton transition is less than 10 GHz, comparable to the optical linewidth of in situ In. Longitudinal spin relaxation times (T₁) exceed reported values for in situ Ga donors, indicating that residual In-implantation damage does not degrade T₁. Two-laser Raman spec- troscopy of the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In-donor qubits in ZnO with optical access to a long-lived nuclear-spin memory.

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Research Organization:: Univ. of Washington, Seattle, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: SC0020378; 2212017 NA0003525

OSTI ID:: 1984913

Alternate ID(s):: OSTI ID: 2205550

Journal Information:: Physical Review Applied, Vol. 19, Issue 5; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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