AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al 0.9 Ga 0.1 N current spreading layer

Maeda, Takuya; Page, Ryan; Nomoto, Kazuki; Toita, Masato; Xing, Huili Grace; Jena, Debdeep

doi:10.35848/1882-0786/ac702e

Title: AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al _0.9 Ga _0.1 N current spreading layer

Journal Article · Fri May 27 00:00:00 EDT 2022 · Applied Physics Express

DOI:https://doi.org/10.35848/1882-0786/ac702e· OSTI ID:1981213

; Page, Ryan; Nomoto, Kazuki; Toita, Masato; Xing, Huili Grace; Jena, Debdeep

Abstract An aluminum nitride (AlN) quasi-vertical Schottky barrier diode (SBD) was fabricated on an AlN bulk substrate. An undoped AlN layer, a Si-doped Al_0.9Ga_0.1N current spreading layer and an AlN buffer layer were grown by plasma-enhanced molecular beam epitaxy. The epitaxial AlN layer was etched down to the n-Al_0.9Ga_0.1N layer to form an Ohmic contact. Ni/Au and V/Al/Ni/Au were deposited on the top AlN layer as Schottky contacts and on the exposed n-Al_0.9Ga_0.1N layer as Ohmic contacts, respectively. The Ohmic characteristics on the n-Al_0.9Ga_0.1N layer, capacitance–voltage (C–V) and current–voltage (I–V) characteristics of the AlN SBD were investigated.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0021230

OSTI ID:: 1981213

Journal Information:: Applied Physics Express, Vol. 15, Issue 6; ISSN 1882-0778

Publisher:: Japan Society of Applied Physics

Country of Publication:: United States

Language:: English

References (31)

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki Nature, Vol. 441, Issue 7091, p. 325-328 https://doi.org/10.1038/nature04760	journal	May 2006
A 271.8 nm deep-ultraviolet laser diode for room temperature operation Zhang, Ziyi; Kushimoto, Maki; Sakai, Tadayoshi Applied Physics Express, Vol. 12, Issue 12 https://doi.org/10.7567/1882-0786/ab50e0	journal	November 2019
AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate Tanaka, Shunya; Teramura, Shohei; Shimokawa, Moe Applied Physics Express, Vol. 14, Issue 5 https://doi.org/10.35848/1882-0786/abf763	journal	April 2021
Shottky Barrier Diodes on AlN Free-Standing Substrates Irokawa, Yoshihiro; Víllora, Encarnación A. García; Shimamura, Kiyoshi Japanese Journal of Applied Physics, Vol. 51 https://doi.org/10.1143/JJAP.51.040206	journal	March 2012
Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy Kinoshita, Toru; Nagashima, Toru; Obata, Toshiyuki Applied Physics Express, Vol. 8, Issue 6 https://doi.org/10.7567/APEX.8.061003	journal	May 2015
Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV Fu, Houqiang; Baranowski, Izak; Huang, Xuanqi IEEE Electron Device Letters, Vol. 38, Issue 9 https://doi.org/10.1109/LED.2017.2723603	journal	September 2017
AlN metal–semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori Japanese Journal of Applied Physics, Vol. 57, Issue 4S https://doi.org/10.7567/JJAP.57.04FR11	journal	March 2018
High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs Hickman, Austin; Chaudhuri, Reet; Bader, Samuel James IEEE Electron Device Letters, Vol. 40, Issue 8 https://doi.org/10.1109/LED.2019.2923085	journal	August 2019
Seeded growth of AlN bulk crystals in m- and c-orientation Lu, P.; Collazo, R.; Dalmau, R. F. Journal of Crystal Growth, Vol. 312, Issue 1 https://doi.org/10.1016/j.jcrysgro.2009.10.008	journal	December 2009
UV transparent single-crystalline bulk AlN substrates Bickermann, Matthias; Epelbaum, Boris M.; Filip, Octavian physica status solidi (c), Vol. 7, Issue 1 https://doi.org/10.1002/pssc.200982601	journal	January 2010
Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport Kumagai, Yoshinao; Kubota, Yuki; Nagashima, Toru Applied Physics Express, Vol. 5, Issue 5 https://doi.org/10.1143/APEX.5.055504	journal	May 2012
Large-area AlN substrates for electronic applications: An industrial perspective Bondokov, Robert T.; Mueller, Stephan G.; Morgan, Kenneth E. Journal of Crystal Growth, Vol. 310, Issue 17 https://doi.org/10.1016/j.jcrysgro.2008.06.032	journal	August 2008
Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning Cho, YongJin; Chang, Celesta S.; Lee, Kevin Applied Physics Letters, Vol. 116, Issue 17 https://doi.org/10.1063/1.5143968	journal	April 2020
Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates Lee, Kevin; Cho, YongJin; Schowalter, Leo J. Applied Physics Letters, Vol. 116, Issue 26 https://doi.org/10.1063/5.0010813	journal	June 2020
GaN-on-Si Vertical Schottky and p-n Diodes Zhang, Yuhao; Sun, Min; Piedra, Daniel IEEE Electron Device Letters, Vol. 35, Issue 6, p. 618-620 https://doi.org/10.1109/LED.2014.2314637	journal	June 2014
Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction Mori, Kazuki; Takeda, Kunihiro; Kusafuka, Toshiki Japanese Journal of Applied Physics, Vol. 55, Issue 5S https://doi.org/10.7567/JJAP.55.05FL03	journal	April 2016
Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN Haidet, Brian B.; Sarkar, Biplab; Reddy, Pramod Japanese Journal of Applied Physics, Vol. 56, Issue 10 https://doi.org/10.7567/JJAP.56.100302	journal	September 2017
Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1) Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki Applied Physics Letters, Vol. 85, Issue 20 https://doi.org/10.1063/1.1824181	journal	November 2004
n-type AlN layer by Si ion implantation Kanechika, Masakazu; Kachi, Tetsu Applied Physics Letters, Vol. 88, Issue 20 https://doi.org/10.1063/1.2204656	journal	May 2006
GaN, AlN, and InN: A review Strite, S. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 10, Issue 4 https://doi.org/10.1116/1.585897	journal	July 1992
Directional dependence of AlN intrinsic complex dielectric function, optical phonon lifetimes, and decay channels measured by polarized infrared reflectivity Kazan, M.; Pereira, S.; Correia, M. R. Journal of Applied Physics, Vol. 106, Issue 2 https://doi.org/10.1063/1.3177323	journal	July 2009
Band parameters for III–V compound semiconductors and their alloys Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R. Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875 https://doi.org/10.1063/1.1368156	journal	June 2001
On temperature-dependent experimental I-V and C-V data of Ni/n-GaN Schottky contacts Yıldırım, Nezir; Ejderha, Kadir; Turut, Abdulmecit Journal of Applied Physics, Vol. 108, Issue 11 https://doi.org/10.1063/1.3517810	journal	December 2010
Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier Zhou, Yi; Wang, Dake; Ahyi, Claude Journal of Applied Physics, Vol. 101, Issue 2 https://doi.org/10.1063/1.2425004	journal	January 2007
Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode Maeda, Takuya; Okada, Masaya; Ueno, Masaki Applied Physics Express, Vol. 10, Issue 5 https://doi.org/10.7567/APEX.10.051002	journal	April 2017
Field and thermionic-field emission in Schottky barriers Padovani, F. A.; Stratton, R. Solid-State Electronics, Vol. 9, Issue 7 https://doi.org/10.1016/0038-1101(66)90097-9	journal	July 1966
Reverse Characteristics of a 4H-SiC Schottky Barrier Diode Hatakeyama, Tetsuo; Shinohe, Takashi Materials Science Forum, Vol. 389-393 https://doi.org/10.4028/www.scientific.net/MSF.389-393.1169	journal	April 2002
Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces Hara, Masahiro; Asada, Satoshi; Maeda, Takuya Applied Physics Express, Vol. 13, Issue 4 https://doi.org/10.35848/1882-0786/ab7bcd	journal	March 2020
Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates Suda, Jun; Yamaji, Kazuki; Hayashi, Yuichirou Applied Physics Express, Vol. 3, Issue 10 https://doi.org/10.1143/APEX.3.101003	journal	October 2010
Near-ideal reverse leakage current and practical maximum electric field in β-Ga ₂ O ₃ Schottky barrier diodes Li, Wenshen; Saraswat, Devansh; Long, Yaoyao Applied Physics Letters, Vol. 116, Issue 19 https://doi.org/10.1063/5.0007715	journal	May 2020
Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga₂O₃ grown by mist chemical vapor deposition Maeda, Takuya; Okigawa, Mitsuru; Kato, Yuji AIP Advances, Vol. 10, Issue 12 https://doi.org/10.1063/5.0028985	journal	December 2020

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