Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells

Li, Panpan; Zhang, Haojun; Li, Hongjian; Cohen, Trevor; Anderson, Ryan; Wong, Matthew S.; Trageser, Emily; Chow, Yi Chao; de Vries, Mattanjah; Nakamura, Shuji; DenBaars, Steven P.

doi:10.1063/5.0093264

Title: Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells

Journal Article · Tue Aug 16 00:00:00 EDT 2022 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0093264· OSTI ID:1979089

^[1];

^[1]; Cohen, Trevor ^[1]; Anderson, Ryan ^[1];

^[1]; Trageser, Emily ^[1];

^[1];

^[1]

University of California, Santa Barbara, CA (United States)

We demonstrate room-temperature stimulated emission at 568 nm from low dislocation density InGaN/GaN multi-quantum wells. For a 1.4 mm long and a 50 $$μ$$4m wide ridge bar optically pumped by a high-power pulsed laser, we observed an emission peak at 568 nm with a narrow spectral width of less than 2 nm at room temperature. The measured pumping threshold is less than 1.5 MW/cm², and the polarization ratio of the emission is over 90%. In conclusion, this demonstration paves the way for the future development of electrically injected InGaN semiconductor yellow laser diodes.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); Solid State Lighting and Energy Electronics Center (SSLEEC); Defense Advanced Research Projects Agency (DARPA)

Grant/Contract Number:: AR0000671; 100010947; HR001120C0135

OSTI ID:: 1979089

Journal Information:: Applied Physics Letters, Vol. 121, Issue 7; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells

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