Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes

Zhang, Kaitian; Hu, Chenxi; Thirupakuzi Vangipuram, Vijay Gopal; Kash, Kathleen; Zhao, Hongping

doi:10.1116/6.0002524

Title: Design of InGaN-ZnSnGa₂N₄ quantum wells for high-efficiency amber light emitting diodes

Journal Article · Wed Apr 12 00:00:00 EDT 2023 · Journal of Vacuum Science and Technology A

DOI:https://doi.org/10.1116/6.0002524· OSTI ID:1968136

Zhang, Kaitian ^[1];

^[2]; Thirupakuzi Vangipuram, Vijay Gopal ^[1];

^[2];

^[1]

The Ohio State Univ., Columbus, OH (United States)
Case Western Reserve Univ., Cleveland, OH (United States)

A novel type-II InGaN-ZnSnGa₂N₄ quantum well (QW) structure is proposed based on recent experimental achievements for the successful epitaxy of ZnSnN₂-GaN alloys and the determination of their band offsets with GaN. The simulation results indicate that this structure is promising as the active region for high-efficiency InGaN-based amber (λ ~ 590 nm) light-emitting diodes (LEDs). The hole wavefunction in the valence band is better confined with the insertion of a monolayer scale of ZnSnGa₂N₄ into the InGaN QW while the electron wavefunction in the conduction band is better confined with the incorporation of an AlGaN layer in the GaN quantum barrier. The band structure of the InGaN-ZnSnGa₂N₄ QW is numerically simulated based on the experimentally measured band offsets between ZnSnGa₂N₄ and GaN. With the InGaN-ZnSnGa₂N₄ QW design, a low In content (20%) is required in the InGaN layer to reach a peak emission wavelength of ~590 nm, yet an In composition of 25% is needed to reach the same emission wavelength for a conventional InGaN QW with the same layer thicknesses. Moreover, the electron-hole wavefunction overlap (Гe1-hh1) for the InGaN-ZnSnGa₂N₄ QW design reaches 18% for an emission wavelength at ~590 nm. This result is much improved over the conventional InGaN QW overlap of 5% emitting at the same wavelength. The increase in electron-hole wavefunction overlap results in an approximately 14 times enhancement in the predicted spontaneous emission radiative recombination rate of the InGaN-ZnSnGa₂N₄ QW as compared to that of the conventional InGaN QW. This InGaN-ZnSnGa₂N₄ QW structure design can be promising to pave a new way to achieve high efficiency amber LEDs.

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Research Organization:: The Ohio State Univ., Columbus, OH (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0008718

OSTI ID:: 1968136

Journal Information:: Journal of Vacuum Science and Technology A, Vol. 41, Issue 3; ISSN 0734-2101

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes

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Title: Design of InGaN-ZnSnGa₂N₄ quantum wells for high-efficiency amber light emitting diodes