Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators

Tseng, Chun-Chih; Song, Tiancheng; Jiang, Qianni; Lin, Zhong; Wang, Chong; Suh, Jaehyun; Watanabe, Kenji; Taniguchi, Takashi; McGuire, Michael A.; Xiao, Di; Chu, Jiun-Haw; Cobden, David H.; Xu, Xiaodong; Yankowitz, Matthew

doi:10.1021/acs.nanolett.2c02931

Title: Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators

Journal Article · Mon Oct 24 00:00:00 EDT 2022 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.2c02931· OSTI ID:1963135

Tseng, Chun-Chih ^[1];

^[1]; Jiang, Qianni ^[1];

^[1]; Wang, Chong ^[1]; Suh, Jaehyun ^[1];

^[2];

^[3]; Xiao, Di ^[4]; Chu, Jiun-Haw ^[1]; Cobden, David H. ^[1];

^[1];

^[1]

University of Washington, Seattle, WA (United States)
National Institute for Materials Science (NIMS), Tsukuba (Japan)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
University of Washington, Seattle, WA (United States); Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)

The extreme versatility of van der Waals materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. 1 For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI₃, CrBr₃, and CrCl₃). Surprisingly, we are unable to detect a magnetic exchange field in the graphene, but instead discover proximity effects featuring unprecedented gate-tunability. The graphene becomes highly hole-doped due to charge transfer from the neighboring magnetic insulator, and further exhibits a variety of atypical gate-dependent transport features. The charge transfer can additionally be altered upon switching the magnetic states of the nearest CrI₃ layers. In conclusion, our results provide a roadmap for exploiting proximity effects arising in graphene coupled to magnetic insulators.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Pacific Northwest National Laboratory (PNNL), Richland, WA (United States); Energy Frontier Research Center (United States). Programmable Quantum Materials

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); Gordon and Betty Moore Foundation; Japan Society for the Promotion of Science (JSPS)

Grant/Contract Number:: AC05-76RL01830; SC0019443; NSF MRSEC 1719797; GBMF6759; JPMXP0112101001; 19H05790; 20H00354; 21H05233

OSTI ID:: 1963135

Alternate ID(s):: OSTI ID: 1901743

Report Number(s):: PNNL-SA-178999

Journal Information:: Nano Letters, Vol. 22, Issue 21; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators

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