Quantum efficiency enhancement in simulated nanostructured negative electron affinity GaAs photocathodes

Rahman, Md Ar; Zhang, Shukui; Elsayed-Ali, Hani E.

doi:10.1063/5.0130884

Title: Quantum efficiency enhancement in simulated nanostructured negative electron affinity GaAs photocathodes

Journal Article · Thu Jan 12 00:00:00 EST 2023 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0130884· OSTI ID:1923292

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Old Dominion University, Norfolk, VA (United States)
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Old Dominion University, Norfolk, VA (United States); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

We report nanostructured negative electron affinity GaAs photocathodes for a polarized electron source are studied using finite difference time domain optical simulation. The structures studied are nanosquare columns, truncated nanocones, and truncated nanopyramids. Mie-type resonances in the 700–800 nm waveband, suitable for generation of polarized electrons, are identified. At resonance wavelengths, the nanostructures can absorb up to 99% of the incident light. For nanosquare columns and truncated nanocones, the maximum quantum efficiency (QE) at 780 nm obtained from simulation is 27%, whereas for simulated nanopyramids, the QE is ~21%. The high photocathode quantum efficiency is due to the shift of Mie resonance toward the longer wavelength, leading to increased light absorption. The field profile distribution shows the excitation of dipole and quadrupole modes within the nanostructures at resonant frequencies. This leads to enhanced photoabsorption and photoelectron generation closer to emission surfaces than for a flat photocathode. The enhanced photoabsorption and reduced electron transport distance for the nanostructured photocathode enhance its QE compared to that for the flat surface wafer.

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Research Organization:: Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Nuclear Physics (NP)

Grant/Contract Number:: AC05-06OR23177

OSTI ID:: 1923292

Alternate ID(s):: OSTI ID: 1909062

Report Number(s):: JLAB-ACC-23-3743; DOE/OR/23177-5689; TRN: US2312415

Journal Information:: Journal of Applied Physics, Vol. 133, Issue 2; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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